Novel method of nucleation enhancement for diamond film on silicon deposited by HFCVD

Xuanxiong Zhang; Xikang Zhang; Shenzhong Yang; Youfang Yao; Tian-Shen Shi

doi:10.1117/12.190808

26 October 1994 Novel method of nucleation enhancement for diamond film on silicon deposited by HFCVD

Xuanxiong Zhang, Xikang Zhang, Shenzhong Yang, Youfang Yao, Tian-Shen Shi

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190808
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

HF acid eroded Si wafers were used as substrates for deposition diamond film by HFCVD. The nucleation process and film characteristics were studied. Enhanced nucleation density to the level for abraded Se substrate and pronounced (111) texture of the obtained continuous diamond film were observed.

Citation Download Citation

Xuanxiong Zhang, Xikang Zhang, Shenzhong Yang, Youfang Yao, and Tian-Shen Shi "Novel method of nucleation enhancement for diamond film on silicon deposited by HFCVD", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190808

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