Paper
14 July 1995 Effect of polyvalent elements impurities on the value of bulk laser damage threshold and UV absorption of KDP single crystals
Marina I. Kolybayeva, Igor M. Pritula, Viacheslav M. Puzikov, Vitaly I. Salo, Serge V. Garnov, Sergei M. Klimentov
Author Affiliations +
Abstract
This paper is devoted to studying the influence of Ca, Si, Pb, and Cr impurities (possessing no absorption bands at the wavelength of acting laser irradiation) on the value of bulk laser damage threshold and UV absorption in KDP single crystals. It is shown that for the investigated concentration range (1 divided by 10-5 1 divided by 10-2 mass% laser damage threshold essentially decreases with raising the concentration of impurity ions in the crystal lattice. The maximal value of the said characteristic (approximately 40 J/cm2) is found to be achieved in the case when the concentration of impurities is not less than 1 divided by 10-5 mass%.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marina I. Kolybayeva, Igor M. Pritula, Viacheslav M. Puzikov, Vitaly I. Salo, Serge V. Garnov, and Sergei M. Klimentov "Effect of polyvalent elements impurities on the value of bulk laser damage threshold and UV absorption of KDP single crystals", Proc. SPIE 2428, Laser-Induced Damage in Optical Materials: 1994, (14 July 1995); https://doi.org/10.1117/12.213738
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Crystals

Absorption

Laser damage threshold

Laser crystals

Lead

Silicon

Calcium

RELATED CONTENT

Fluoride laser crystals: old and new
Proceedings of SPIE (February 28 2006)
A Ce LiCAF UV laser pumped by an intracavity...
Proceedings of SPIE (September 01 2004)
Effect of impurities on the value of the bulk laser...
Proceedings of SPIE (April 20 1998)

Back to Top