Characterization of chemical-mechanical polished overlay targets using coherence probe microscopy

Bert F. Plambeck; Noam Knoll; Patrick J. Lord

doi:10.1117/12.209213

22 May 1995 Characterization of chemical-mechanical polished overlay targets using coherence probe microscopy

Bert F. Plambeck, Noam Knoll, Patrick J. Lord

Proceedings Volume 2439, Integrated Circuit Metrology, Inspection, and Process Control IX; (1995) https://doi.org/10.1117/12.209213
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

Chemical-Mechanical Polishing processes are helping chip makers solve problems with multilevel metals, smaller device features and narrower stepper lens depth of focus, but are creating new challenges for other segments of the semiconductor industry. In particular, planarized metrology targets can cause overlay measurements to be inaccurate as well as imprecise. Coherence Probe Microscopy (CPM), when applied to overlay metrology, provides a solution for registration measurements on chemical-mechanical polished wafers. This paper describes the use of CPM measurements technology to characterize chemical-mechanical polishing wafer processes. The presented results show a comparison of misregistration measurements from planarized wafers before and after etch and discusses the impact on registration by chemical-mechanical polishing.

Citation Download Citation

Bert F. Plambeck, Noam Knoll, and Patrick J. Lord "Characterization of chemical-mechanical polished overlay targets using coherence probe microscopy", Proc. SPIE 2439, Integrated Circuit Metrology, Inspection, and Process Control IX, (22 May 1995); https://doi.org/10.1117/12.209213

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