Paper
22 February 1995 Comparison among GaAs monolithic processes regarding the requirements of transimpedance amplifiers using root-locus techniques
Valter Cocco, Piero Marietti, Alessandro Trifiletti
Author Affiliations +
Proceedings Volume 2449, Fiber Optic Network Components; (1995) https://doi.org/10.1117/12.201963
Event: Advanced Networks and Services, 1995, Amsterdam, Netherlands
Abstract
The following technique compares GaAs monolithic processes regarding the requirement of transimpedance amplifiers to be used in optical front-ends. This technique uses a lumped element model of the forward amplifier to establish relationships between the small signal model of the devices which form the forward amplifier and the closed loop performance, as well as the root locus representation of the loop gain transfer function to set clear constraints to the frequency response. The comparison is performed by establishing a set of constraints to ensure the effectiveness of solution found and to reduce the number of degrees of freedom in this problem. This comparison has been carried out by taking into consideration the presence of the parasitic capacitance of the photodiode which plays an important role in the bandwidth performance.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Valter Cocco, Piero Marietti, and Alessandro Trifiletti "Comparison among GaAs monolithic processes regarding the requirements of transimpedance amplifiers using root-locus techniques", Proc. SPIE 2449, Fiber Optic Network Components, (22 February 1995); https://doi.org/10.1117/12.201963
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KEYWORDS
Optical amplifiers

Capacitance

Photodiodes

Receivers

Gallium arsenide

Amplifiers

Field effect transistors

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