Spatially variable reaction in the formation of anodically grown porous silicon structure

Maria Cristina dos Santos; Douglas S. Galvao; O. Teschke; D. M. Soares

doi:10.1117/12.217346

23 August 1995 Spatially variable reaction in the formation of anodically grown porous silicon structure

Maria Cristina dos Santos, Douglas S. Galvao, O. Teschke, D. M. Soares

Proceedings Volume 2531, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIV; (1995) https://doi.org/10.1117/12.217346
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

The formation mechanism of anodically grown porous silicon is experimentally shown to be controlled by two electrochemical reactions: the silicon dissolution reaction occurring at fluorine-covered sites on the surface and the oxidation of molecular hydrogen that takes place at hydrogen-covered sites. The latter reaction injects electrons in the silicon surface and produces an increase in dissolution rate at fluorine-covered sits. The dissolution rate increase in the presence of excess charge at the fluorine-covered sites is investigated theoretically by semi-empirical Hartree-Fock calculations that show that this spatially variable dissolution generates the porous silicon structure.

Citation Download Citation

Maria Cristina dos Santos, Douglas S. Galvao, O. Teschke, and D. M. Soares "Spatially variable reaction in the formation of anodically grown porous silicon structure", Proc. SPIE 2531, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIV, (23 August 1995); https://doi.org/10.1117/12.217346

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