Hybrid 256 x 256 LWIR FPA using MBE-grown HgCdTe on GaAs

Akihiro Kawahara; Akira Ajisawa; Keiji Miyamoto; Masayuki Kanzaki; Tokuhito Sasaki; Mitsuko Tomono; Naoki Oda; Takeshi Shima; Yasunobu Sekihara

doi:10.1117/12.218241

8 September 1995 Hybrid 256 x 256 LWIR FPA using MBE-grown HgCdTe on GaAs

Akihiro Kawahara, Akira Ajisawa, Keiji Miyamoto, Masayuki Kanzaki, Tokuhito Sasaki, Mitsuko Tomono, Naoki Oda, Takeshi Shima, Yasunobu Sekihara

Author Affiliations +

Proceedings Volume 2552, Infrared Technology XXI; (1995) https://doi.org/10.1117/12.218241
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

A hybrid HgCdTe 256 by 256 FPA for LWIR detection was fabricated and an infrared image was demonstrated. MCT epilayers were grown on GaAs substrates by MBE and annealed to p- type. The n⁺ on p photodiodes were formed by boron ion implantation. The mean value of zero bias differential resistance for the diode array was measured to be 8.0 M(Omega) with a cutoff wavelength of 9.5 micrometer. The effective quantum efficiency was estimated to be 0.55, and the optical cross talk was estimated to be 8.2%. A multiline parallel integration readout circuit designed especially for this 256 by 256 LWIR FPA, had 8.3 X 10⁷ electron capacity, a 190 microsecond integration time, and a single output. This work shows that the MBE growth method on GaAs substrates, pn junction formation process, the MLPI circuit design, and the hybridization technique are useful technologies.

Citation Download Citation

Akihiro Kawahara, Akira Ajisawa, Keiji Miyamoto, Masayuki Kanzaki, Tokuhito Sasaki, Mitsuko Tomono, Naoki Oda, Takeshi Shima, and Yasunobu Sekihara "Hybrid 256 x 256 LWIR FPA using MBE-grown HgCdTe on GaAs", Proc. SPIE 2552, Infrared Technology XXI, (8 September 1995); https://doi.org/10.1117/12.218241

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