Paper
8 September 1995 Improved cell design for Schottky barrier infrared detector arrays
Author Affiliations +
Abstract
The responsivity of large scale platinum silicide arrays, having small pixels, is low compared to the responsivity of large area test diodes fabricated on the same wafer. Often, the responsivity loss is described by assigning a lower Fowler emission coefficient to the detectors. We find the reduced responsivity to be the direct result of a reduction in the effective active area of the detector. This reduction in effective active area becomes more pronounced as the detector cell size is reduced. We provide a simple model for the area reduction in terms of modulation of detector Schottky potential by the underlying depletion region of the detector guard ring. We also suggest changes in the detector array unit cell design, which will maximize responsivity.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Freeman D. Shepherd, Jonathan Martin Mooney, Alexis P. Tzannes, and James E. Murguia "Improved cell design for Schottky barrier infrared detector arrays", Proc. SPIE 2552, Infrared Technology XXI, (8 September 1995); https://doi.org/10.1117/12.218235
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Cited by 1 scholarly publication.
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KEYWORDS
Sensors

Electrodes

Detector arrays

Diodes

Doping

Infrared detectors

Infrared radiation

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