Comparative study of submicron gap filling and planarization techniques

Adriana E. Hass Bar-Ilan; N. Gutmann

doi:10.1117/12.221142

15 September 1995 Comparative study of submicron gap filling and planarization techniques

Adriana E. Hass Bar-Ilan, N. Gutmann

Proceedings Volume 2636, Microelectronic Device and Multilevel Interconnection Technology; (1995) https://doi.org/10.1117/12.221142
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

As submicron devices continue to shrink, causing increased aspect ratios, gap filling in intermetal dielectric (IMD) becomes more difficult. At the time, global planarization becomes essential to meet the depth of focus budget for photolithography. The paper compares different techniques: Plasma Enhanced-CVD (PECVD) TEOS dep-etch-dep, CVD ozone-TEOS (both subatmospheric and atmospheric), Flowfill^TM (a novel CVD process that uses a silane and hydrogen peroxide chemistry). Gap filling, planarity (local and global) and device performance comparisons are presented. It is concluded that use of the Flowfill^TM, as part of a layer called 'Advanced Planarization Layer' (APL), will save costly planarization steps, while maintaining sort yield and device performance.

Citation Download Citation

Adriana E. Hass Bar-Ilan and N. Gutmann "Comparative study of submicron gap filling and planarization techniques", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); https://doi.org/10.1117/12.221142

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