Electrical characteristics of n- and p-MOSFETs with N2O-reoxidized NH3-nitrided N2O oxides as gate dielectrics

L. K. Han; Hai-Hong Wang; Jason Yan; Jin-ha Kim; G. W. Yoon; Dim-Lee Kwong

doi:10.1117/12.221134

15 September 1995 Electrical characteristics of n- and p-MOSFETs with N₂O-reoxidized NH₃-nitrided N₂O oxides as gate dielectrics

L. K. Han, Hai-Hong Wang, Jason Yan, Jin-ha Kim, G. W. Yoon, Dim-Lee Kwong

Author Affiliations +

Proceedings Volume 2636, Microelectronic Device and Multilevel Interconnection Technology; (1995) https://doi.org/10.1117/12.221134
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

In this paper, we have systematically investigated the effects of NH₃ nitridation of N₂O oxides and subsequent reoxidation on MOSFET performance and reliability. Results indicate that as compared to oxides grown in pure O₂ or N₂O ambient, NH₃ nitridation of N₂O oxides (with or without reoxidation) slightly degrades the electron mobility ((mu) _e,eff) of n-MOSFETs at low V_G, but enhances (mu) _e,eff significantly at high V_G. For p-MOSFETs, nitridation of N₂O oxides degrades hole mobility ((mu) _h,eff) slightly for all V_G. In addition, reoxidation of NH₃-nitrided N₂O oxides is required to improve the hot-carrier immunity for both n- and p-MOSFETs under various static bias configurations, with N₂O-reoxidation being considerable more effective than O₂-reoxidation. It is demonstrated that N₂O reoxidation is capable of completely removing nitridation- induced electron traps, resulting in devices with hot-carrier reliability comparable to N₂O oxide devices. The superior reliability characteristics together with demonstrated improved resistance to boron penetration make N₂O-reoxidized NH₃-nitrided N₂O oxides a very promising gate dielectric candidate for deep- submicrometer dual-gate CMOS applications.

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L. K. Han, Hai-Hong Wang, Jason Yan, Jin-ha Kim, G. W. Yoon, and Dim-Lee Kwong "Electrical characteristics of n- and p-MOSFETs with N₂O-reoxidized NH₃-nitrided N₂O oxides as gate dielectrics", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); https://doi.org/10.1117/12.221134

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