Integral contact process in submicron technology

Yu-Hua Lee; Bing-Yue Tsui

doi:10.1117/12.221136

15 September 1995 Integral contact process in submicron technology

Yu-Hua Lee, Bing-Yue Tsui

Proceedings Volume 2636, Microelectronic Device and Multilevel Interconnection Technology; (1995) https://doi.org/10.1117/12.221136
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

in the down-scaling of DRAM (dynamics random access memory) cell size, feature size control becomes a severe problem. Usually we define +/- I 0% of minimum feature size for its process window, e.g., for O.5trn process, its variation should be well controlled within O.O5tm to guarantee production reliability.

Citation Download Citation

Yu-Hua Lee and Bing-Yue Tsui "Integral contact process in submicron technology", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); https://doi.org/10.1117/12.221136

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