Novel LOCOS isolation process for producing highly reliable oxides

Mark I. Gardner; Daniel Kadoch

doi:10.1117/12.221131

15 September 1995 Novel LOCOS isolation process for producing highly reliable oxides

Mark I. Gardner, Daniel Kadoch

Proceedings Volume 2636, Microelectronic Device and Multilevel Interconnection Technology; (1995) https://doi.org/10.1117/12.221131
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

As device dimensions become scaled to the deep sub-micron regime, the field oxidation process is most significant in achieving reliable oxide quality in gate and LOCOS edge regions. Overall, the role of the field oxide must be to provide excellent isolation and to remain reliable at the LOCOS edge and have minimum encroachment.

Citation Download Citation

Mark I. Gardner and Daniel Kadoch "Novel LOCOS isolation process for producing highly reliable oxides", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); https://doi.org/10.1117/12.221131

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