Optical characterization of surface damage of silicon wafers caused by plasma cleaning

A. Rahim Forouhi; Iris Bloomer

doi:10.1117/12.221197

18 September 1995 Optical characterization of surface damage of silicon wafers caused by plasma cleaning

A. Rahim Forouhi, Iris Bloomer

Proceedings Volume 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II; (1995) https://doi.org/10.1117/12.221197
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

During processing of microelectronic devices, the silicon substrate is typically subjected to a cleaning process in order to prepare its surface for deposition of various layers of thin films. Usually the cleaning process creates a damaged surface layer, which in turn can affect the characteriscs of a deposited film. In particular, plasma cleaning characterization technique that can simultaneously and unambiguously determine the thickness and n and k spectra of the damaged surface layer is described. The technique can be used for sustaining engineering, quality control, and research and development as a means to optimize the surface characteristics of silicon wafers subjected to plasma cleaning.

Citation Download Citation

A. Rahim Forouhi and Iris Bloomer "Optical characterization of surface damage of silicon wafers caused by plasma cleaning", Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); https://doi.org/10.1117/12.221197

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