Scanning photon microscope based on ac surface photovoltage: applications to nondestructive evaluation of metallic contaminants in silicon wafers

Hirofumi Shimizu; Chusuke Munakata

doi:10.1117/12.221211

18 September 1995 Scanning photon microscope based on ac surface photovoltage: applications to nondestructive evaluation of metallic contaminants in silicon wafers

Hirofumi Shimizu, Chusuke Munakata

Author Affiliations +

Proceedings Volume 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II; (1995) https://doi.org/10.1117/12.221211
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

A scanning photon microscope based on ac surface photovoltage (SPV), which can be used to characterize electronic charges in silicon (Si) wafers, is successfully applied for nondestructive detection of metallic contaminants. If Al³⁺ and Fe³⁺ replace Si⁴⁺ in a native oxide, (AlOSi)^- and (FeOSi)^- networks form and a negative charge appears. However, P$5+) acts as a positive charge, possibly in the form of (POSi)⁺. Thermal oxidation causes Al and Fe to segregate at the very top of the thermal oxide and a negative charge survives. Dipping in an aqueous hydrofluoric acid (HF) solution causes a positive charge at wafer surfaces. When n-type Si wafers treated with HF solution are dipped in aqueous solutions containing Fe or Cu ions, the net negative charge is proportionally enhanced as the Fe or Cu concentration increases, resulting in the appearance of an ac SPV.

Citation Download Citation

Hirofumi Shimizu and Chusuke Munakata "Scanning photon microscope based on ac surface photovoltage: applications to nondestructive evaluation of metallic contaminants in silicon wafers", Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); https://doi.org/10.1117/12.221211

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