Paper
3 November 1995 Photoluminescence diagnostic of semi-insulating materials for ion-implanted and quantum-size structures on gallium-arsenide-based micro-, opto-, and quantum electronics devices
Fedir V. Motsnyi, Mikhail P. Lisitsa
Author Affiliations +
Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226180
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
On the basis of experimental investigations of authors the expediency of using photoluminescence (PL) method in gallium arsenide semiconductor device technology is shown.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fedir V. Motsnyi and Mikhail P. Lisitsa "Photoluminescence diagnostic of semi-insulating materials for ion-implanted and quantum-size structures on gallium-arsenide-based micro-, opto-, and quantum electronics devices", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226180
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KEYWORDS
Gallium arsenide

Excitons

Quantum wells

Polaritons

Silicon

Crystals

Luminescence

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