|
The A62Se3 - Si02 - Si structure with A62Ses for writing a.nd Si for readout :h.a.s been suggested ior Xra. y im.a.ge a.pplica.tion. In this structure th.e recording ha.ve been. ca.:rri.ed out under sim:ulta.n.eous projectioit oi a.n X-ray pa.ttern on the top semitransparent contact a.nd a.pplica.tion of the external volta.ge, but the erasing - under illumin.a.tion. of light from the ra.n.ge of th.e .4s2S es funda.men.tal a.bsorption. a.n.d a.pplica.tion. of th.e opposite pola.rity external voltage. Th.e cha.."ging kinetics was revealed to be described by exponential la.w with. saturation.. It was found th.at th.e charge is a.ccumu.la.ted at th.e deep tra.ps disposed a.t th.e As2Se3- Si02 interface. Th.is structure ma.ke it possible to work m the integration small signa.i regime but the space separation. of recording and read.out layers provides un.destromg repetition.al readout of image. It was established th.at th.e da.rk rela.xa.tion of a.ccumula.ted cha.rge ta.kes place due to th.e.rmo-:iield emission of holes from t:ra.ps according to Pool-Frenkel la.w.
Keywords: solid state detector, image device structure, X-ray, area meter, amorph.ous semiconductor
|
