Paper
12 April 1996 GaN, GaAlN, and AlN for use in UV detectors for astrophysics: an update
Patrick Kung, Adam W. Saxler, Xiaolong Zhang, Danielle Walker, Manijeh Razeghi, Melville P. Ulmer
Author Affiliations +
Abstract
In SPIE Proceeding 2397 we demonstrated that there is a large payoff still to be gained by further improvements in the performance of solar blind UV detectors for astronomical purposes. We suggested that a particularly promising future technology is one based on the ability of investigators to produce high-quality films made of wide bandgap III-IV semiconductors. Here we report on significant progress we have made over the past year to fabricate and test single-pixel devices. The next step will be to measure and improve detective efficiency, measure the solar blindness over a larger dynamic range, and begin developing multiple-pixel designs.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick Kung, Adam W. Saxler, Xiaolong Zhang, Danielle Walker, Manijeh Razeghi, and Melville P. Ulmer "GaN, GaAlN, and AlN for use in UV detectors for astrophysics: an update", Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); https://doi.org/10.1117/12.237696
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KEYWORDS
Ultraviolet radiation

Gallium nitride

Galactic astronomy

Astronomy

Sensors

Ultraviolet detectors

Imaging spectroscopy

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