Electro-optic wafer beam deflector in LiTaO3

Jun Li; Hsing-Chine Cheng; Matthew J. Kawas; David N. Lambeth; Tuviah E. Schlesinger; Daniel D. Stancil

doi:10.1117/12.239695

10 May 1996 Electro-optic wafer beam deflector in LiTaO₃

Jun Li, Hsing-Chine Cheng, Matthew J. Kawas, David N. Lambeth, Tuviah E. Schlesinger, Daniel D. Stancil

Proceedings Volume 2700, Nonlinear Frequency Generation and Conversion; (1996) https://doi.org/10.1117/12.239695
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

A novel electro-optic beam deflector is reported based on ferroelectric domain inversion extending through the thickness of a Z-cut LiTaO₃ wafer. The selective domain inversion is achieved by electric-field poling assisted by proton exchange, rather than proton exchange followed by rapid thermal annealing. The deflection sensitivity of the device was measured to be 5.0 mrad/KV. This is 93% of the theoretical value for this geometry, and a significant improvement over the value of 80% of theoretical previously reported for a waveguide deflector.

Citation Download Citation

Jun Li, Hsing-Chine Cheng, Matthew J. Kawas, David N. Lambeth, Tuviah E. Schlesinger, and Daniel D. Stancil "Electro-optic wafer beam deflector in LiTaO₃", Proc. SPIE 2700, Nonlinear Frequency Generation and Conversion, (10 May 1996); https://doi.org/10.1117/12.239695

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