Paper
27 May 1996 Characterization of the alignment system on a laboratory extreme ltraviolet lithography tool
Khanh B. Nguyen, Daniel A. Tichenor, Kurt W. Berger, Avijit K. Ray-Chaudhuri, Steven J. Haney, Rodney P. Nissen, Yon E. Perras, Richard William Arling, Richard H. Stulen, Linus A. Fetter, Donald M. Tennant, Donald L. White, Obert R. Wood II
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Abstract
A laboratory extreme ultraviolet ltihography tool (EUVL) has been assembled at Sandia National Laboratories. Its major components include a Schwarzschild camera with 0.1 micrometers resolution integrated with a laser plasma source and a magnetically levitated stage. Other subsystems are a grazing-incidence optical system to maintain focus, and a through-the- lens Moire alignment system for overlay. This exposure tool is being used to study integration issues for EUVL. Experiments have been performed to characterize the alignment system's performance. The measured sensitivity of the alignment system is 25 nm 3(sigma) .
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Khanh B. Nguyen, Daniel A. Tichenor, Kurt W. Berger, Avijit K. Ray-Chaudhuri, Steven J. Haney, Rodney P. Nissen, Yon E. Perras, Richard William Arling, Richard H. Stulen, Linus A. Fetter, Donald M. Tennant, Donald L. White, and Obert R. Wood II "Characterization of the alignment system on a laboratory extreme ltraviolet lithography tool", Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996); https://doi.org/10.1117/12.240496
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KEYWORDS
Optical alignment

Semiconducting wafers

Photomasks

Cameras

Extreme ultraviolet lithography

Moire patterns

Extreme ultraviolet

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