Limits to etch resistance for 193-nm single-layer resists

Roderick R. Kunz; Susan C. Palmateer; Anthony R. Forte; Robert D. Allen; Gregory M. Wallraff; Richard A. Di Pietro; Donald C. Hofer

doi:10.1117/12.241835

14 June 1996 Limits to etch resistance for 193-nm single-layer resists

Roderick R. Kunz, Susan C. Palmateer, Anthony R. Forte, Robert D. Allen, Gregory M. Wallraff, Richard A. Di Pietro, Donald C. Hofer

Author Affiliations +

Proceedings Volume 2724, Advances in Resist Technology and Processing XIII; (1996) https://doi.org/10.1117/12.241835
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

An important aspect of single-layer resist use at 193-nm is the inherently poor etch resistance of the polymers currently under evaluation for use. In order to provide the information necessary for resist process selection at 193 nm, we have projected the ultimate etch resistance possible in 193-nm transparent polymers based on a model we have developed. First, a data base of etch rates was assembled for various alicyclic methacrylates. This data base has been used to develop an empirical structure-property relationship for predicting polymer etch rates relative to novolac-based resist. This relationship takes the functional form normalized rate equals -3.80r³ plus 6.71r² minus 4.42r plus 2.10, where r is the mass fraction of polymer existing as cyclic carbon. From this analysis, it appears as though methacrylate resists equal in etch resistance to deep UV resists will be possible. Early generations of methacrylate-based 193-nm resists were also evaluated in actual IC process steps, and those results are presented with a brief discussion of how new plasma etch chemistries may be able to further enhance resist etch selectivity.

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Roderick R. Kunz, Susan C. Palmateer, Anthony R. Forte, Robert D. Allen, Gregory M. Wallraff, Richard A. Di Pietro, and Donald C. Hofer "Limits to etch resistance for 193-nm single-layer resists", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241835

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