Prediction of light scattering characteristics of particles and structures on surfaces by the coupled-dipole method

Brent Martin Nebeker; Roland Schmehl; Greg W. Starr; E. Dan Hirleman

doi:10.1117/12.240119

21 May 1996 Prediction of light scattering characteristics of particles and structures on surfaces by the coupled-dipole method

Brent Martin Nebeker, Roland Schmehl, Greg W. Starr, E. Dan Hirleman

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Proceedings Volume 2725, Metrology, Inspection, and Process Control for Microlithography X; (1996) https://doi.org/10.1117/12.240119
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

The ability to predict angle-resolved light scattering characteristics of surface features, including particle contaminants and circuit structures, is identified as an important tool for the development of next generation wafer inspection systems. A model and associated code based on the coupled-dipole method used to model the light scattering is described. Then, predicted scattering signatures for polystyrene latex spheres and silicon dioxide features (nominal 1 micrometer size) on smooth silicon surfaces are reported. The surface features of interest were from the ASU/SRC block of the SEMATECH Patterned Wafer Defect Standard die developed by VLSI Standards, Inc. Finally, the computational results are compared with scattering measurements from individual particles and features. A coherent beam incident of the features on the surface had a wavelength of 632.8 nm, 7 mm beam spot size, and was at an incident angle of 45 degrees. A ringed photodetector centered on the specular reflection was used to measure the angle-resolved scatter. Over the range of scattering angles studied (10 degrees to 60 degrees), the results for differential scattering cross-section agreed to within a factor of 3 or 4.

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Brent Martin Nebeker, Roland Schmehl, Greg W. Starr, and E. Dan Hirleman "Prediction of light scattering characteristics of particles and structures on surfaces by the coupled-dipole method", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); https://doi.org/10.1117/12.240119

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