Cathodoluminescence Studies Of Semiconductor-Oxide Interfaces

S. W. McKnight

doi:10.1117/12.931684

30 April 1981 Cathodoluminescence Studies Of Semiconductor-Oxide Interfaces

S. W. McKnight

Proceedings Volume 0276, Optical Characterization Techniques for Semiconductor Technology; (1981) https://doi.org/10.1117/12.931684
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

Electron-beam induced emission from insulating oxides on semiconductors can be used to probe the oxide-semiconductor interface both by studying films of different thicknesses and by varying the penetration depth of the electron beam. In two important systems, anodic oxides on GaAs and thermal oxides on Si, major luminescence centers, possibly related to oxygen vacancies, are determined by these methods to be concentrated near the interface. Emission from native oxides can be observed on both these semiconductors and is similar to emission from thicker oxides, although there are modifications in the relative intensities and in the position of some lines. In the anodic oxide spacial inhomogeneities and changes in the sample with time are also demonstrated by cathodoluminescence.

Citation Download Citation

S. W. McKnight "Cathodoluminescence Studies Of Semiconductor-Oxide Interfaces", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); https://doi.org/10.1117/12.931684

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