Characteristics of Ta4B/SiC x-ray mask blanks

Ryo Ohkubo; Tsutomu Shoki; Hideaki Mitsui; Noromichi Annaka; Yoichi Yamaguchi

doi:10.1117/12.245215

24 July 1996 Characteristics of Ta₄B/SiC x-ray mask blanks

Ryo Ohkubo, Tsutomu Shoki, Hideaki Mitsui, Noromichi Annaka, Yoichi Yamaguchi

Proceedings Volume 2793, Photomask and X-Ray Mask Technology III; (1996) https://doi.org/10.1117/12.245215
Event: Symposium on Photomask and X-Ray Mask Technology, 1996, Kawasaki City, Japan

Abstract

Stress controllability and stress distribution of Ta₄B absorber on polished SiC films have been investigated. Dry etching behaviors of Cr and Si0₂ films have been characterized as etch-masking and etch-stopping materials. Xe gas sputtering was found to be effective to obtain higher stress controllability and more uniform stress distribution for Ta₄B film compared to Ar gas sputtering. Cr film has been found to have high etching selectivity of more than 15 to the Ta₄B film during the ECR etching with Cl₂ gas, which is proven to be suitable for etch-masking and etch-stopping layers of the Ta₄B absorber.

Citation Download Citation

Ryo Ohkubo, Tsutomu Shoki, Hideaki Mitsui, Noromichi Annaka, and Yoichi Yamaguchi "Characteristics of Ta₄B/SiC x-ray mask blanks", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); https://doi.org/10.1117/12.245215

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