Theory of InGaN multiquantum well laser diodes

Georgy G. Zegrya

doi:10.1117/12.273779

2 May 1997 Theory of InGaN multiquantum well laser diodes

Georgy G. Zegrya

Proceedings Volume 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared; (1997) https://doi.org/10.1117/12.273779
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

The present work is concerned with threshold characteristics of InGaN multi-quantum well laser diodes. The threshold current is analyzed in detail as a function of quantum well parameters and temperature. The laser structure is optimized to improve its threshold characteristics and increase the maximum radiation power.

Citation Download Citation

Georgy G. Zegrya "Theory of InGaN multiquantum well laser diodes", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); https://doi.org/10.1117/12.273779

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