Paper
4 April 1997 850 nm proton-implanted 8 x 8 VCSEL array design and performance measurements
Author Affiliations +
Abstract
Arrays of 8 X 8 of GaAs/AlGaAs vertical cavity surface emitting lasers (VCSELs), which operate at approximately 850 nm, are being fabricated for integration with low power, optoelectronic integrated circuits. These high performance optoelectronic computing modules are being developed for high speed switching and data processing applications. The VCSEL array is a gain-guided, top-surface emitting device. It is fabricated from a GaAs/AlGaAs p-i-n distributed Bragg reflector structure, which is grown by metal organic chemical vapor deposition. The VCSEL fabrication process involves two stages of hydrogen ion implantation and three stages of metallization. A set of five photolithography masks has ben developed for VCSEL fabrication.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter S. Guilfoyle, John M. Hessenbruch, Jack L. Jewell, and Henryk Temkin "850 nm proton-implanted 8 x 8 VCSEL array design and performance measurements", Proc. SPIE 3005, Optoelectronic Interconnects and Packaging IV, (4 April 1997); https://doi.org/10.1117/12.271102
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Vertical cavity surface emitting lasers

Mirrors

Semiconducting wafers

Calibration

Quantum wells

Reflectivity

Gallium arsenide

Back to Top