Ferroelectric PZT thin films on Si and SBN substrates

Ratnakar R. Neurgaonkar; Jeffrey G. Nelson; Joey Lin; James Cheng

doi:10.1117/12.271434

11 April 1997 Ferroelectric PZT thin films on Si and SBN substrates

Ratnakar R. Neurgaonkar, Jeffrey G. Nelson, Joey Lin, James Cheng

Proceedings Volume 3008, Miniaturized Systems with Micro-Optics and Micromechanics II; (1997) https://doi.org/10.1117/12.271434
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

The sol-gel technique has been used to produce perovskite PZT thin films on lattice-matched SBN:60 and LaAlO₃ substrates. These films were spin-coated and then annealed in the range of 500-700 degrees C in an oxygen atmosphere. Highly grain oriented films showed high polarization and the potential for a large electro-optic response.In all cases, the PZT thin films were highly crystalline, with dielectric constants > 1300. PZT films were also deposited on Pt- metallized Si using the same deposition technique in order to establish the effect of annealing conditions on the formation of pyrochlore phase.

Citation Download Citation

Ratnakar R. Neurgaonkar, Jeffrey G. Nelson, Joey Lin, and James Cheng "Ferroelectric PZT thin films on Si and SBN substrates", Proc. SPIE 3008, Miniaturized Systems with Micro-Optics and Micromechanics II, (11 April 1997); https://doi.org/10.1117/12.271434

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