Paper
7 July 1997 Simulating photomask edge roughness and corner rounding
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Abstract
Corner rounding and edge roughness of a rectangular opening at a glass-chrome mask are simulated with TEMPEST. The intensity patterns on the image plane are extracted and compared for these defects at several degrees of fabrication-induced imperfection. A 4X - DUV lithography printing system is assumed with NA equals 0.6 and (sigma) equals 0.5. The prototypical geometry simulate was a 4 micrometers X 1 micrometers line on the mask. The results indicate that the rounding of the corners does not decrease the printed area by more than 2 percent for a 0.4 micrometers radius corner rounding and that roughness should not be a concern, at least in DUV, since it does not crucially affect the linewidth of the printed area.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Konstantinos Adam, Robert John Socha, Thomas V. Pistor, and Andrew R. Neureuther "Simulating photomask edge roughness and corner rounding", Proc. SPIE 3050, Metrology, Inspection, and Process Control for Microlithography XI, (7 July 1997); https://doi.org/10.1117/12.275911
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Cited by 1 scholarly publication.
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KEYWORDS
Photomasks

Edge roughness

Lithography

Semiconducting wafers

Deep ultraviolet

Electromagnetism

Printing

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