Polarization characteristics of quantum-well semiconductor structures

Ivan S. Manak; Dmitrii V. Karasev; Valerii K. Kononenko; Sergei V. Nalivko; Aleksei A. Romanenko; Aleksei A. Vitalisov

doi:10.1117/12.271798

1 April 1997 Polarization characteristics of quantum-well semiconductor structures

Ivan S. Manak, Dmitrii V. Karasev, Valerii K. Kononenko, Sergei V. Nalivko, Aleksei A. Romanenko, Aleksei A. Vitalisov

Proceedings Volume 3094, Polarimetry and Ellipsometry; (1997) https://doi.org/10.1117/12.271798
Event: Polarimetry and Ellipsometry, 1996, Kazimierz Dolny, Poland

Abstract

For low-dimensional semiconductor systems, matrix elements of optical dipole transitions versus different directions of the radiation polarization vector have been analyzed in detail. Analytical and numerical calculations are performed for quantum-well heterostructures in III-V semiconductor compounds. An influence of the spectral broadening due to intrasubband relaxation of current carriers on the transformation of light emission spectra in TE and TM modes with excitation has been studied. Distributions of electromagnetic wave fields and the optical confinement factor for TE and TM modes in multiple quantum-well layer structures, including a novel type of asymmetric heterostructures, have been determined. For quantum-wire structures, including a novel type of asymmetric heterostructures, have ben determined. For quantum-wire structures, the degree of light emission polarization has been examined and effects in porous Si luminescence are explained.

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Ivan S. Manak, Dmitrii V. Karasev, Valerii K. Kononenko, Sergei V. Nalivko, Aleksei A. Romanenko, and Aleksei A. Vitalisov "Polarization characteristics of quantum-well semiconductor structures", Proc. SPIE 3094, Polarimetry and Ellipsometry, (1 April 1997); https://doi.org/10.1117/12.271798

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