Influence of growth conditions on electrophysical properties of HgMnTe/CdZnTe heterostructures

Alexander E. Belyaev; S. A. Vitusevich; Sergiy Mikhailovich Komirenko

doi:10.1117/12.280422

26 August 1997 Influence of growth conditions on electrophysical properties of HgMnTe/CdZnTe heterostructures

Alexander E. Belyaev, S. A. Vitusevich, Sergiy Mikhailovich Komirenko

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280422
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

Epitaxial Mn_xHg_1-xTe layers grown by the liquid phase method at temperatures 848K and 793K are investigated. Due to diffusion of Cd from substrate Cd_0.96Zn_0.04Te obtained layers are four-component. Results of conductivity and Hall measurements show that the graded-gap layer gives noticeable contribution to the transport characteristics.

Citation Download Citation

Alexander E. Belyaev, S. A. Vitusevich, and Sergiy Mikhailovich Komirenko "Influence of growth conditions on electrophysical properties of HgMnTe/CdZnTe heterostructures", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280422

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