Paper
29 December 1997 Cell viability after exposure to optical tweezers using high-power red laser diodes or near-infrared lasers
Herbert Schneckenburger, Anita Hendinger, Reinhard Sailer, Michael H. Gschwend, Manfred Bauer, Wolfgang S. L. Strauss, Karin Schuetze
Author Affiliations +
Abstract
In comparison with optical tweezers using near infrared lasers, red emitting high power laser diodes ((lambda) equals 670 - 680 nm) may offer several advantages, such as easier adjustment, smaller beam diameter in the focal plane and low absorption of optical radiation. One-photon absorption by water or two-photon absorption by various cellular components may induce cell killing by heat or by photochemical reactions. To test cell viability, cultivated CHO cells were exposed to various light doses of this wavelength as well as to a moderate light dose of a conventional Nd:YAG laser. Loss of clonogenicity of about 50% as well as a reduction of cell growth were measured at 680 nm when using a maximum light dose of 2.4 GJ/cm2. In contrast, no cell damage was found at 670 nm as well as at 1064 nm when using a light dose of 340 MJ/cm2, which revealed to be sufficient for several applications.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Herbert Schneckenburger, Anita Hendinger, Reinhard Sailer, Michael H. Gschwend, Manfred Bauer, Wolfgang S. L. Strauss, and Karin Schuetze "Cell viability after exposure to optical tweezers using high-power red laser diodes or near-infrared lasers", Proc. SPIE 3197, Optical Biopsies and Microscopic Techniques II, (29 December 1997); https://doi.org/10.1117/12.297971
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KEYWORDS
Semiconductor lasers

Optical tweezers

Nd:YAG lasers

Absorption

High power lasers

Near infrared

Chlorine

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