Paper
5 September 1997 High-aspect-ratio etching in polymer for microactuator applications
Wen Y. Lee, Junbo Gao, Toshiki Hirano, Susanna Chan, Long-Sheng Fan
Author Affiliations +
Proceedings Volume 3223, Micromachining and Microfabrication Process Technology III; (1997) https://doi.org/10.1117/12.284471
Event: Micromachining and Microfabrication, 1997, Austin, TX, United States
Abstract
High aspect ratio line and trench plating molds suitable for microactuator applications were etched in polymer using oxygen plasma in an rf inductive plasma etcher. A high vertical etch rate of approximately equals 2.5 micrometer/min in a polymer has been achieved for 2 micrometer wide lines and trenches, with even higher rates being observed for wider trenches due to the usual RIE lag effect. The lateral etch rate can be reduced by adjusting the inductive to bias power ratio, and by lowering the etch temperatures. Under optimum etching conditions, aspect ratios of close to 20:1 in a 2.5 micrometer line/2.0 micrometer spacing pattern and of greater than 20:1 in isolated 2.0 micrometer lines with greater than or equal to 5 micrometer spacing have been achieved.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wen Y. Lee, Junbo Gao, Toshiki Hirano, Susanna Chan, and Long-Sheng Fan "High-aspect-ratio etching in polymer for microactuator applications", Proc. SPIE 3223, Micromachining and Microfabrication Process Technology III, (5 September 1997); https://doi.org/10.1117/12.284471
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Cited by 9 scholarly publications.
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KEYWORDS
Etching

Polymers

Microactuators

Plasma

Oxygen

Plasma etching

Plating

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