Bulk-micromachined pressure sensor based on epi-poly techniques

Paul T. J. Gennissen; Colin M. A. Ashruf; Martijn Kaak; Patrick J. French; Pasqualina M. Sarro

doi:10.1117/12.284518

5 September 1997 Bulk-micromachined pressure sensor based on epi-poly techniques

Paul T. J. Gennissen, Colin M. A. Ashruf, Martijn Kaak, Patrick J. French, Pasqualina M. Sarro

Proceedings Volume 3224, Micromachined Devices and Components III; (1997) https://doi.org/10.1117/12.284518
Event: Micromachining and Microfabrication, 1997, Austin, TX, United States

Abstract

This paper presents the development of a pressure sensor based on epi-poly processing technology. The use of epi-poly creates an SOI structure and thus facilitates the use of an oxide etch-stop for the bulk micromachining. This avoids the requirement for the complicated electrochemical techniques. This simplification of the process greatly enhances the batch fabrication capabilities. Furthermore, the epi-poly deposition can be performed at the same time as the standard epitaxy used for the electronics. By defining the oxide layer only where a membrane is required, all other areas of the chip can be used for the fabrication of the read-out electronics. Etching from the back of the wafer, to define the membrane, is performed after completion of the bipolar processing. This etching is performed in KOH or TMAH which has a high etch selectivity over the oxide layer. This paper presents the fabrication and initial measurement results of the epi-poly pressure sensor.

Citation Download Citation

Paul T. J. Gennissen, Colin M. A. Ashruf, Martijn Kaak, Patrick J. French, and Pasqualina M. Sarro "Bulk-micromachined pressure sensor based on epi-poly techniques", Proc. SPIE 3224, Micromachined Devices and Components III, (5 September 1997); https://doi.org/10.1117/12.284518

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