Compound Semiconductor Surface And Interface Problems In Liquid Phase Epitaxy (LPE)

M. B. Small; R. M. Potemski

doi:10.1117/12.934289

15 September 1982 Compound Semiconductor Surface And Interface Problems In Liquid Phase Epitaxy (LPE)

M. B. Small, R. M. Potemski

Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934289
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

The morphologies observed on layers of III-V compounds and their alloys grown by Liquid Phase Epitaxy (LPE) are reviewed; these include: facets, terraces and the effect of small misorientation of the substrate; effects due to both the moving and the static three-phase boundary line on the surface of the crystal; nucleation effects; and the effects of insoluble particles in they solutions.

Citation Download Citation

M. B. Small and R. M. Potemski "Compound Semiconductor Surface And Interface Problems In Liquid Phase Epitaxy (LPE)", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); https://doi.org/10.1117/12.934289

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