Paper
15 September 1982 High Efficiency GaAs(1-x)P(x) Solar Cells Fabricated By Vacuum Metalorganic Chemical Vapor Deposition
Lewis M. Fraas
Author Affiliations +
Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934284
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States
Abstract
Monolithic multicolor solar cells offer the potential of very high energy conversion efficiencies for concentrated sunlight systems. The development of these cells will require the sequential fabrication of low and high band gap junctions in a continuous process system. This paper describes the fabrication of GaAs (0.82)P(0.18) solar cells via vacuum metalorganic chemical vapor deposition (MO-CVD) and their evaluation. GaAs (0.82)P(0.18) junctions can be used for the high band gap junction in multicolor cells, and the vacuum MO-CVD system is a potential continuous process system for these cells. Shallow homojunction GaAs (0.82)P(0.18) cells with active area efficiencies of 14.8% at 7.4 suns are obtained despite a 0.8% lattice mismatch between the cell active layers and the GaAs substrate.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lewis M. Fraas "High Efficiency GaAs(1-x)P(x) Solar Cells Fabricated By Vacuum Metalorganic Chemical Vapor Deposition", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); https://doi.org/10.1117/12.934284
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Cited by 2 scholarly publications.
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KEYWORDS
Solar cells

Gallium arsenide

Diodes

Sun

Semiconductors

Light emitting diodes

Solar concentrators

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