Semiconductor laser reliability

Daniel P. Wilt

doi:10.1117/12.307023

20 April 1998 Semiconductor laser reliability

Daniel P. Wilt

Proceedings Volume 3244, Laser-Induced Damage in Optical Materials: 1997; (1998) https://doi.org/10.1117/12.307023
Event: Laser-Induced Damage in Optical Materials: 1997, 1997, Boulder, CO, United States

Abstract

In this paper, a review of the state-of-the-art in semiconductor laser diode reliability is presented, with a particular regard to the reliability of laser diodes used in long-distance telecommunication system. Remarkable advances in semiconductor laser reliability have been demonstrated over their thirty year history, leading to estimated median device lifetimes in excess of 100 years for most applications.

Citation Download Citation

Daniel P. Wilt "Semiconductor laser reliability", Proc. SPIE 3244, Laser-Induced Damage in Optical Materials: 1997, (20 April 1998); https://doi.org/10.1117/12.307023

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