Paper
23 April 1998 Subpicosecond time-resolved Raman studies of nonequilibrium excitations in wide-bandgap GaN
Kong-Thon Tsen, Ravindra P. Joshi, David K. Ferry
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Abstract
We have studied non-equilibrium electron distributions and electron-longitudinal optical phonon scattering rates in wurtzite GaN by subpicosecond time-resolved Raman spectroscopy. Our experimental result show that for electron densities n greater than or equal to 5 X 1017 cm-3, the non-equilibrium electron distributions in wurtzite GaN can be very well described by Fermi-Dirac distribution functions with the effective electron temperature much higher than the lattice temperature. In addition, we find that the total electron-longitudinal optical phonon scattering rate in GaN is about one order of magnitude larger than that in GaAs. We attribute this enormous increase in the electron- longitudinal optical phonon scattering rate to the much larger ionicity in GaN.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kong-Thon Tsen, Ravindra P. Joshi, and David K. Ferry "Subpicosecond time-resolved Raman studies of nonequilibrium excitations in wide-bandgap GaN", Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); https://doi.org/10.1117/12.306168
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KEYWORDS
Phonons

Gallium nitride

Scattering

Raman scattering

Raman spectroscopy

Laser scattering

Light scattering

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