Stable and fast simulation of semiconductor lasers

Jun Kong; Zhiping Yu; Zhilian Yang

doi:10.1117/12.316673

7 July 1998 Stable and fast simulation of semiconductor lasers

Jun Kong, Zhiping Yu, Zhilian Yang

Proceedings Volume 3283, Physics and Simulation of Optoelectronic Devices VI; (1998) https://doi.org/10.1117/12.316673
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

A new method which is very stable and fast, has been developed, to self-consistently solve the electric equations, scalar Helmholtz equation and photon rate equation. This method is based on a new concept, control equation, so that high efficient algorithms for the non- linear single-variable equation can be applied to control the solution procedure. Above threshold, tremendous improvement in speed and stability was obtained. Multiple spectral mode behavior can be simulated with the same efficiency of single-mode simulation, owning to the inclusion of the control equation concept. This 2D simulator works well even for very high bias. This method has the potential to be applied to the simulation of a wide variety of semiconductor lasers. In addition, the carrier energy transport and lattice thermal diffusion are accounted for. The finite element method is applied to the Helmholtz equation. The generalized eigenvalue problem thus generated is solved directly and quickly by a kind of Lanczos algorithm. The discretization of all fundamental equations is on the same triangular element mesh. Simulation of a GRIN-SCH BH SQW laser shows good agreement with the experimental data.

Citation Download Citation

Jun Kong, Zhiping Yu, and Zhilian Yang "Stable and fast simulation of semiconductor lasers", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); https://doi.org/10.1117/12.316673

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KEYWORDS

Optical simulations

Semiconductor lasers

Computer simulations

Laser damage threshold

Quantum wells

Diffusion

Finite element methods

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