Characteristics and reliability of high-power GaAs/AlGaAs laser diodes with a decoupled confinement heterostructure

Tsuyoshi Fujimoto; Yoshikazu Yamada; Yasuo Oeda; Atsushi Okubo; Yumi Yamada; Kiyofumi Muro

doi:10.1117/12.307594

4 May 1998 Characteristics and reliability of high-power GaAs/AlGaAs laser diodes with a decoupled confinement heterostructure

Tsuyoshi Fujimoto, Yoshikazu Yamada, Yasuo Oeda, Atsushi Okubo, Yumi Yamada, Kiyofumi Muro

Author Affiliations +

Proceedings Volume 3285, Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.307594
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

High Power GaAs/AlGaAs laser diodes with a decoupled confinement heterostructure (DCH) have been developed. This novel structure features broadened waveguide layers and thin carrier block layers sandwiching an active layer. Catastrophic optical damage (COD) level was twice as high as the corresponding separated confinement heterostructure (SCH) laser diode due to the improvement of mode profiles. Al- content of cladding layers is greatly reduced in DCH laser diode without degrading temperature characteristics. The decrease of electrical and thermal resistivities allows high- power and high-efficiency operation. CW output, 4.6 W was obtained with a 50 micrometer-aperture 809 nm DCH laser diode. The maximum efficiency was 49% at 2.8 W. Life test was carried out over 2,000 hours under the conditions of 1.0 W - 50 degrees Celsius. The median life was estimated to be more then ten thousand hours at this condition. Decoupled confinement heterostructure is advantageous for the fabrication of the index guided structure, since the reduction of chemically active Al-composition relieves the process difficulties related to the chemical etching and the selective re-growth. Index guided laser diode with a buried ridge structure presented 400 mW single mode operation at 860 nm. The life test was carried out under the conditions of 300 mW - 50 degrees Celsius. All the 25 devices showed no failure up to 7,000 hours.

Citation Download Citation

Tsuyoshi Fujimoto, Yoshikazu Yamada, Yasuo Oeda, Atsushi Okubo, Yumi Yamada, and Kiyofumi Muro "Characteristics and reliability of high-power GaAs/AlGaAs laser diodes with a decoupled confinement heterostructure", Proc. SPIE 3285, Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III, (4 May 1998); https://doi.org/10.1117/12.307594

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