Capacitance voltage characteristics of the electrochemical cell for bulk silicon micromachining

Ami Chand; Janak Singh; Sudhir Chandra

doi:10.1117/12.305555

16 April 1998 Capacitance voltage characteristics of the electrochemical cell for bulk silicon micromachining

Ami Chand, Janak Singh, Sudhir Chandra

Proceedings Volume 3321, 1996 Symposium on Smart Materials, Structures, and MEMS; (1998) https://doi.org/10.1117/12.305555
Event: Smart Materials, Structures and MEMS, 1996, Bangalore, India

Abstract

The C-V measurement for MOS capacitor technique has been adapted to investigate the anisotropic electrochemical etching of silicon for bulk micromachining C-V characteristics of the etching cell have been obtained during the electrochemical etching process. The behavior of the characteristics has been explained on the basis of various layers at the etching interface.

Citation Download Citation

Ami Chand, Janak Singh, and Sudhir Chandra "Capacitance voltage characteristics of the electrochemical cell for bulk silicon micromachining", Proc. SPIE 3321, 1996 Symposium on Smart Materials, Structures, and MEMS, (16 April 1998); https://doi.org/10.1117/12.305555

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available