Application of development-free vapor photolithography in etching silicon nitride

Xiaoyin Hong; Shengquan Duan; Jianping Lu; Peiqing Wang; Yongqi Chen

doi:10.1117/12.309603

5 June 1998 Application of development-free vapor photolithography in etching silicon nitride

Xiaoyin Hong, Shengquan Duan, Jianping Lu, Peiqing Wang, Yongqi Chen

Proceedings Volume 3331, Emerging Lithographic Technologies II; (1998) https://doi.org/10.1117/12.309603
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

A new dry etching technique--development-free vapor photolithography was used to transfer pattern on silicon nitride film. Plasma enhanced chemical vapor deposition silicon nitride film and thin low pressure chemical vapor deposition silicon nitride film can be etched to get positive pattern. The difference of etching rate between exposed area and unexposed area was attributed to the concentration difference of accelerators which was realized through photochemical reaction. The reaction mechanism and other phenomena have also been discussed.

Citation Download Citation

Xiaoyin Hong, Shengquan Duan, Jianping Lu, Peiqing Wang, and Yongqi Chen "Application of development-free vapor photolithography in etching silicon nitride", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309603

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