Critical issues for developing a high-throughput SCALPEL system for sub-0.18-um lithography generations

Stuart T. Stanton; James Alexander Liddle; Warren K. Waskiewicz; Masis M. Mkrtchyan; Anthony E. Novembre; Lloyd R. Harriott

doi:10.1117/12.309631

5 June 1998 Critical issues for developing a high-throughput SCALPEL system for sub-0.18-um lithography generations

Stuart T. Stanton, James Alexander Liddle, Warren K. Waskiewicz, Masis M. Mkrtchyan, Anthony E. Novembre, Lloyd R. Harriott

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Proceedings Volume 3331, Emerging Lithographic Technologies II; (1998) https://doi.org/10.1117/12.309631
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

The potential for SCALPEL to provide economically viable production lithography capabilities for post-optical generations depends largely on achieving adequate wafer throughput. We have analyzed throughput-limiting performance attributes of the SCALPEL approach in order to identify critical design issues and develop a process for evaluating its unique parameter space. An important feature of the SCALPEL approach is that small image sub-fields are assembled to form complete device patterns. Further, electron-electron interactions result in a throughput- dependent image blur, which is a governing parameter for many inter-related performance areas of SCALPEL. Error budgets for key issues affecting critical dimension (CD) have been developed to analyze this unique design space, using models of the image-forming process including stitching on sub-field seams. These budgets assist in identifying the most critical design issues and demonstrating their inter-relationships and tradeoffs.

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Stuart T. Stanton, James Alexander Liddle, Warren K. Waskiewicz, Masis M. Mkrtchyan, Anthony E. Novembre, and Lloyd R. Harriott "Critical issues for developing a high-throughput SCALPEL system for sub-0.18-um lithography generations", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309631

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