New family of non-chemically amplified resists

Ari Aviram; Marie Angelopoulos; Edward D. Babich; Inna V. Babich; Karen E. Petrillo; David E. Seeger

doi:10.1117/12.309589

5 June 1998 New family of non-chemically amplified resists

Ari Aviram, Marie Angelopoulos, Edward D. Babich, Inna V. Babich, Karen E. Petrillo, David E. Seeger

Proceedings Volume 3331, Emerging Lithographic Technologies II; (1998) https://doi.org/10.1117/12.309589
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Non-chemically amplified resists offer advantages over chemically-amplified (CA) resists because they are less susceptible to temperature variations and contaminants. In order for non-CA resists to be viable, they have to perform lithographically at an equivalent level with the CA resists from the point of view of quantum yield, resolution and etch resistance. We report here on new non-CA resists based on polymer esters that undergo deesterification to the corresponding acids upon exposure to UV, x-ray and e-beam radiation. The efficiency of the radiation reaction is surprisingly high. The resulting poly acids are base soluble and can be employed as positive working resists. The resists are composed of polymers and copolymers of methacrylate esters. The sensitivity of one derivative to x-ray is 75 mJ/cm² and to e-beam is 1.0 (mu) C/cm² at 10 KV. Best resolution obtained was 125 nm with x-ray radiation.

Citation Download Citation

Ari Aviram, Marie Angelopoulos, Edward D. Babich, Inna V. Babich, Karen E. Petrillo, and David E. Seeger "New family of non-chemically amplified resists", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309589

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