Optimization of pattern shape in electron-beam cell projection lithography

Takahiro Ema; Hiroshi Yamashita; Ken Nakajima; Hideo Kobinata; Hiroshi Nozue

doi:10.1117/12.309601

5 June 1998 Optimization of pattern shape in electron-beam cell projection lithography

Takahiro Ema, Hiroshi Yamashita, Ken Nakajima, Hideo Kobinata, Hiroshi Nozue

Proceedings Volume 3331, Emerging Lithographic Technologies II; (1998) https://doi.org/10.1117/12.309601
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

In electron-beam cell projection lithography, it is important to achieve high resolution and high throughput enough for use in mass production. Mask bias method has been demonstrated to be very effective in improving both performance. However, factors of mask bias effects have not been clarified. In this paper, we have analyzed the factors of the mask bias effects and have discussed a method for estimating the optimum bias. We have found that the decrease of beam blur due to the Coulomb interaction and expansion the space of streams to decrease the beam overlapping neighboring each other are the main factors and that the back-scattering effect can be negligible. Finally, we have derived and proposed a method for obtaining the optimum mask bias that produces high resolution and high throughput.

Citation Download Citation

Takahiro Ema, Hiroshi Yamashita, Ken Nakajima, Hideo Kobinata, and Hiroshi Nozue "Optimization of pattern shape in electron-beam cell projection lithography", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309601

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