Trace contaminants from photoresist materials by modern spectrometry determination

Dumitru Gh. Ulieru

doi:10.1117/12.308786

8 June 1998 Trace contaminants from photoresist materials by modern spectrometry determination

Dumitru Gh. Ulieru

Proceedings Volume 3332, Metrology, Inspection, and Process Control for Microlithography XII; (1998) https://doi.org/10.1117/12.308786
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

The modern semiconductor manufacturing used advanced photoresists chemicals with extremely low levels of trace metallic contaminants. The use of Inductively Coupled Plasma Spectrometry (ICP-MS) allows for the rapid analysis of these chemicals with sensitivity similar to furnace atomic absorption and with minimal sample preparation. Sample introduction methods currently being used include ultrasonic nebulization (USN) and electrothermal vaporization (ETV).

Citation Download Citation

Dumitru Gh. Ulieru "Trace contaminants from photoresist materials by modern spectrometry determination", Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); https://doi.org/10.1117/12.308786

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