Standard developer available ArF resist and performance

Yasunori Uetani; Hiroaki Fujishima; Yoshiko Miya; Ichiki Takemoto

doi:10.1117/12.312445

29 June 1998 Standard developer available ArF resist and performance

Yasunori Uetani, Hiroaki Fujishima, Yoshiko Miya, Ichiki Takemoto

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312445
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Alicyclic groups are preferable resin components of ArF resists due to better dry-etching resistance and higher transparency at 193 nm. On the other hand, Alicyclic groups bring poor adhesion of ArF resists during wet development, because of their higher hydrophobic nature. To avoid the peeling problem diluted developer has been suggested to use. However, the compatibility with existing standard developer of i-line and KrF resists is necessary for the mass production. In this paper we compared two kinds of resists for the standard developer (TMAH 2.38%) application. The former has AdCEE unit and norbornene derivative/maleic anhydride alternating copolymer, together with relatively weak organic acid generating PAG. The latter having 2MAdMA/GBLMA copolymer and onium salt PAG shows better lithographic performance.

Citation Download Citation

Yasunori Uetani, Hiroaki Fujishima, Yoshiko Miya, and Ichiki Takemoto "Standard developer available ArF resist and performance", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312445

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