Paper
13 September 1982 Ultrafast High Resolution Contact Lithography Using Excimer Lasers
K. Jain, C. G. Willson, B. J. Lin
Author Affiliations +
Abstract
A new technique for fine-line, high-speed photolithography using ultraviolet excimer lasers is proposed and demonstrated. Absence of speckle and resolution down to 1000 line-pairs/mm are experimentally demonstrated. Using a XeCl laser at 308 nm and a KrF laser at 249 nm, excellent quality images are obtained by contact printing in two positive photoresists. These images are comparable to state-of-the-art lithography done with conventional lamps, the major difference being that the excimer laser technique is -2 orders of magnitude faster. Preliminary results on reciprocity behavior in several resists are also presented.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Jain, C. G. Willson, and B. J. Lin "Ultrafast High Resolution Contact Lithography Using Excimer Lasers", Proc. SPIE 0334, Optical Microlithography I: Technology for the Mid-1980s, (13 September 1982); https://doi.org/10.1117/12.933585
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Cited by 4 scholarly publications.
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KEYWORDS
Excimer lasers

Lithography

Speckle

Photoresist materials

Semiconducting wafers

Optical lithography

Gas lasers

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