Paper
2 July 1998 Nonlinear excitonic susceptibilities of semiconductors at high levels of excitation
P. I. Khadzhi, D. V. Tkachenko
Author Affiliations +
Proceedings Volume 3405, ROMOPTO '97: Fifth Conference on Optics; (1998) https://doi.org/10.1117/12.312782
Event: ROMOPTO '97: Fifth Conference on Optics, 1997, Bucharest, Romania
Abstract
The hysteretical behavior of imaginary and real parts of the semiconductor susceptibility in the exciton range of spectrum taking into account the exciton-photon and elastic exciton- exciton interaction in the pump-probe regime depending on the intensity and frequency of the strong pump laser pulse and on the frequency of the test pulse is studied. The conditions of the emergence of the damping suppression and test pulse gain are determined. The abrupt red and blue shifts of the spectral position of the exciton absorption band depending on the intensity of the pump pulse are predicted.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. I. Khadzhi and D. V. Tkachenko "Nonlinear excitonic susceptibilities of semiconductors at high levels of excitation", Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); https://doi.org/10.1117/12.312782
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KEYWORDS
Excitons

Absorption

Semiconductors

Crystals

Photons

Semiconductor lasers

Electromagnetic radiation

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