Comparison of etching methods for subquarter-micron-rule mask fabrication

Tsukasa Abe; Toshifumi Yokoyama; Sato Kyoko; Hiroyuki Miyashita; Naoya Hayashi

doi:10.1117/12.328797

1 September 1998 Comparison of etching methods for subquarter-micron-rule mask fabrication

Tsukasa Abe, Toshifumi Yokoyama, Sato Kyoko, Hiroyuki Miyashita, Naoya Hayashi

Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328797
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan

Abstract

Dry-etching process has possibility for fabricate small features and to enhance resolution limit because of smaller CD shift during etching. Recently, optical proximity patterns (OPC) like serif decorations begin to be adopted for mass-production masks, Dry etching is effective for OPC patterns fabrication. However, in order to bring dry-etching into production, some issues have to be overcome. In this paper, we evaluate etching characteristics such as selectivity to resist, edge roughness, edge shape, loading effect, micro-loading effect, critical dimension uniformity, and performance of optical proximity pattern fabrication using inductively coupled plasma, plasma etch, and reactive ion etching. It was confirmed that dry-etching process reduced edge roughness of chrome patterns. Among three plasma sources, ICP was most effective for reducing loading effect and micro-loading effect and obtaining vertical edge shape. The issue of dry process with ICP was low selectivity to resist. It was approximately 1. CD loss uniformity processed with each dry etching system was not satisfied with our target. Finally, we demonstrated to fabricate capacitor patterns of 0.15 micrometers -design rule with serif decorations.

Citation Download Citation

Tsukasa Abe, Toshifumi Yokoyama, Sato Kyoko, Hiroyuki Miyashita, and Naoya Hayashi "Comparison of etching methods for subquarter-micron-rule mask fabrication", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); https://doi.org/10.1117/12.328797

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