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22 June 1998 Temperature-dependence photoreflectance study of InAs/GaAs self-assembled quantum dots
Gwo-Jen Jan, S. M. Chang, ChihMing Lai, M. C. Chen, Hao-Hsiung Lin
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Proceedings Volume 3419, Optoelectronic Materials and Devices; 34190M (1998) https://doi.org/10.1117/12.311005
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan
Abstract
Temperature dependence photoreflectance has been used to study InAs/GaAs self-assembled quantum dots (QDs). The QDs samples were grown on (100) misoriented 7 degrees toward (110) GaAs semi-insulting substrate by a gas source molecular beam epitaxy with changing V/III ratio. The energy features of PR spectra from QDs and wetting layer (WL) were fitted by the first derivative Gaussian functional form and band-gap feature was fitted by the derivative-like Lorentian line shape function.THE blue-shift of optical transition energies responded from QDs has been characterized. The signals responded from an ultra-thin wetting layer of InAs/GaAs QDs samples and band-gap transition energy from GaAs portions were also observed. It demonstrates that the energy features of PR spectrum responded form QDs and WL section could provide the important information about QDs quality. The results show that the size, uniformity and density of QDs can be improved by the changing V/III ratio.
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Gwo-Jen Jan, S. M. Chang, ChihMing Lai, M. C. Chen, and Hao-Hsiung Lin "Temperature-dependence photoreflectance study of InAs/GaAs self-assembled quantum dots", Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190M (22 June 1998); https://doi.org/10.1117/12.311005
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KEYWORDS
Quantum dots
Gallium arsenide
Molecular beam epitaxy
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