Stability of the gate-dielectric/a-Si:H interface with hydrogen plasma treatment

I-Min Lu; Yeong-E Chen; Ting-Hui Huang; Hui-Chu Lin

doi:10.1117/12.311060

17 June 1998 Stability of the gate-dielectric/a-Si:H interface with hydrogen plasma treatment

I-Min Lu, Yeong-E Chen, Ting-Hui Huang, Hui-Chu Lin

Proceedings Volume 3421, Display Technologies II; (1998) https://doi.org/10.1117/12.311060
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan

Abstract

Hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) with single-layer gate insulator have been stressed with DC bias to investigate the device performance. A low defect density interface between the gate insulator (SiNx) and the a-Si:H film is one of the most important factors to obtain high device performance. For the back-channel-etched (BCE) type TFTs, gate SiNx is deposited before a-Si:H film, and the hydrogen plasma was used to treat the SiNx insulator surfaces. From the results of stress experiments, exposing SiNx to hydrogen plasma leads to the charge trapping in SiNx insulator and the state creation in the a-Si:H film. Consequently, the hydrogen plasma treatment of SiNx surface affects not only the SiNx insulator but also the post-deposited a-Si:H film.

Citation Download Citation

I-Min Lu, Yeong-E Chen, Ting-Hui Huang, and Hui-Chu Lin "Stability of the gate-dielectric/a-Si:H interface with hydrogen plasma treatment", Proc. SPIE 3421, Display Technologies II, (17 June 1998); https://doi.org/10.1117/12.311060

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