Paper
26 October 1998 Current status and technology of the HgCdTe IR detector in Korea
Author Affiliations +
Abstract
The progress and current status of HgCdTe infrared detector in Korea during the last ten years is reviewed and future perspectives of infrared detector research and development are also given. The research and development of HgCdTe infrared detector was started in 1987. In the first five years, we had focused on the material growth, especially liquid phase epitaxy (LPE) by slider method and single element MWIR photovoltaic detector with large active area was realized with this LPE material. After that, the development of the linear array infrared detectors including photoconductive and photovoltaic devices was initiated and will be finished very soon. During this period we developed the travelling heater method (THM) for the use of the linear arrays. On the other hand MBE growth of HgCdTe was started for a specific applications and MOVPE process was employed for the two-color infrared development. Focal plane array program will be initiated very soon.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jae Mook Kim, Hocheol Lee, and Sang-Hee Suh "Current status and technology of the HgCdTe IR detector in Korea", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); https://doi.org/10.1117/12.328030
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Cited by 2 scholarly publications.
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KEYWORDS
Mercury cadmium telluride

Diodes

Infrared detectors

Liquid phase epitaxy

Medium wave

Potassium

Detector development

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